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PRODUCT CATEGORY:
MOSFET
TECHNOLOGY:
SI
MOUNTING STYLE:
SMD/SMT
PACKAGE/CASE:
TO-220-3
NUMBER OF CHANNELS:
1 CHANNEL
TRANSISTOR POLARITY:
N-CHANNEL
VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE:
60 V
ID - CONTINUOUS DRAIN CURRENT:
16 A
RDS ON - DRAIN-SOURCE RESISTANCE:
80 MOHMS
VGS - GATE-SOURCE VOLTAGE:
16 V
MINIMUM OPERATING TEMPERATURE:
- 55 C
MAXIMUM OPERATING TEMPERATURE:
+ 175 C
CONFIGURATION:
SINGLE
CHANNEL MODE:
ENHANCEMENT
HEIGHT:
9.15 MM
LENGTH:
10.4 MM
SERIES:
N-CHANNEL STRIPFET
TRANSISTOR TYPE:
1 N-CHANNEL
TYPE:
MOSFET
WIDTH:
4.6 MM
FORWARD TRANSCONDUCTANCE - MIN:
17 S
FALL TIME:
12.5 NS
PD - POWER DISSIPATION:
45 W
RISE TIME:
37 NS
TYPICAL TURN-OFF DELAY TIME:
20 NS
TYPICAL TURN-ON DELAY TIME:
10 NS
UNIT WEIGHT:
330 MG
MOSFET
TECHNOLOGY:
SI
MOUNTING STYLE:
SMD/SMT
PACKAGE/CASE:
TO-220-3
NUMBER OF CHANNELS:
1 CHANNEL
TRANSISTOR POLARITY:
N-CHANNEL
VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE:
60 V
ID - CONTINUOUS DRAIN CURRENT:
16 A
RDS ON - DRAIN-SOURCE RESISTANCE:
80 MOHMS
VGS - GATE-SOURCE VOLTAGE:
16 V
MINIMUM OPERATING TEMPERATURE:
- 55 C
MAXIMUM OPERATING TEMPERATURE:
+ 175 C
CONFIGURATION:
SINGLE
CHANNEL MODE:
ENHANCEMENT
HEIGHT:
9.15 MM
LENGTH:
10.4 MM
SERIES:
N-CHANNEL STRIPFET
TRANSISTOR TYPE:
1 N-CHANNEL
TYPE:
MOSFET
WIDTH:
4.6 MM
FORWARD TRANSCONDUCTANCE - MIN:
17 S
FALL TIME:
12.5 NS
PD - POWER DISSIPATION:
45 W
RISE TIME:
37 NS
TYPICAL TURN-OFF DELAY TIME:
20 NS
TYPICAL TURN-ON DELAY TIME:
10 NS
UNIT WEIGHT:
330 MG
